View KSC5802D_4116064.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

KSC5802D
KSC5802D
High Voltage Color Display Horizontal Deflection Output (Built In Damper Diode)
* * * * High Breakdown Voltage BVCBO=1500V High Speed Switching : tF=0.1s (Typ.) Wide S.O.A For C-Monitor(69KHz)
B Equivalent Circuit C
1
50 typ. E
TO-3PF 2.Collector 3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 1500 800 6 10 30 60 150 - 55 ~ 150 Units V V V A A W C C
Electrical Characteristics TC=25C unless otherwise noted
Symbol ICES ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) tF Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Fall Time Test Condition VCE = 1400V, VBE=0 VCB = 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 6A IC = 6A, IB = 1.5A IC = 6A, IB = 1.5A VCC = 200V, IC = 6A IB1 = 1.2A, IB2= - 2.4A RL = 33.3 0.1 50 15 7 Min. Typ. Max. 1 10 250 40 11.5 3 1.5 0.3 V V s Units mA A mA
(c)2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC5802D
Typical Characteristics
10 9
100
V CE=5V
IC[A], COLLECTOR CURRENT
8 7 6 5 4 3 2 1 0 0 2 4 6
IB = 400mA IB = 300mA IB = 200mA IB = 100mA
hFE, DC CURRENT GAIN
IB = 1.0A IB = 900mA IB = 800mA IB = 700mA IB = 600mA IB = 500mA
10
8
10
1 0.1
1
10
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characterisic
Figure 2. DC current Gain
10
12
VCE(sat)[mV], SATURATION VOLTAGE
VCE = 5V
10
1
IC[A], COLLECTOR CURRENT
8
IC=5IB IC=3IB
0.1
6
4
2
0.01 0.1
1
10
0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
100
RESISTIVE LOAD
IB1=1.2A
IC[A], COLLECTOR CURRENT
VCC=200V IC=6A
tstg[s], STORAGE TIME tF[s], FALL TIME
tstg
10
10s DC 100ms 10ms 100s 1ms
1
1
tf
0.1
0.1
SINGLE PULSE Tc=25
0.01 0.1 1 10 1 10 100 1000
-IB2[A], BASE CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Switching Time
Figure 6. Safe Operating Area
(c)2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC5802D
Typical Characteristics (Continued)
100
80
70
IC[A], COLLECTOR CURRENT
PD[W], POWER DISSIPATION
10000
60
10
IB2 = -1A CONST (at IC >= 5A)
50
40
30
1
20
IC = 5IB1 = 5IB2 L = 500H SINGLE PULSE
0.1 10 100 1000
10
0 0 25 50 75 100 125 150 175 200
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[], CASE TEMPERATURE
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
(c)2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC5802D
Package Demensions
TO-3PF
5.50 0.20
4.50 0.20
15.50 0.20
o3.60 0.20
3.00 0.20 (1.50)
10.00 0.20
10
26.50 0.20
23.00 0.20
16.50 0.20
14.50 0.20
0.85 0.03
16.50 0.20
2.00 0.20
14.80 0.20
2.00 0.20 2.00 0.20 4.00 0.20 0.75 -0.10
+0.20
2.00 0.20
2.50 0.20
2.00 0.20
3.30 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.90 -0.10
+0.20
3.30 0.20
2.00 0.20
5.50 0.20
1.50 0.20
Dimensions in Millimeters
(c)2000 Fairchild Semiconductor International Rev. A, February 2000
22.00 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2000 Fairchild Semiconductor International
Rev. E

▲Up To Search▲

Price & Availability of KSC5802D

	To Download KSC5802D Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .